The gap between a power device that works on the bench and one that survives years in the field is filled by testing—at the datasheet level, the thermal level, the reliability level, and the assembly level. For engineers and buyers qualifying power discretes, understanding what is tested, how, and with what criteria separates a trustworthy … Read more
This guide is the entry point to the Good-Ark power MOSFET library: it maps the selection decisions—voltage class, polarity, loss budget, and package—and points to the dedicated articles that go deep on each step. Use it as the decision map before opening a datasheet; the linked articles carry the detail. The Selection Map Power MOSFET … Read more
This guide is the shared reference for the thermal method used across the Good-Ark package and device articles. It explains the thermal chain, the board design levers, and the measurement discipline, so the package-specific articles can focus on their own differences instead of repeating the fundamentals. If you are new to power thermal design, read … Read more
This guide is the shared reference for gate-drive design across the Good-Ark library. It covers the two questions every drive design answers—how much current, and how much dead time—plus the protection set, and it routes the device-specific detail to the dedicated articles. Read this page for the method; read the linked articles for the device … Read more
This guide is the entry point to the Good-Ark photovoltaic protection library. It maps the protection layers of a PV system—from the module substring to the inverter input—and routes each threat to the right device and the right article. Use it to position the protection architecture before selecting components. The Protection Layers PV protection is … Read more
The first question in almost every load-switching design is not which part number to use—it is which polarity. N-channel and P-channel MOSFETs solve the same switching problem from opposite sides of the circuit, and the choice drives the gate drive, the bill of materials, and sometimes the whole board topology. This article compares the two … Read more
Every MOSFET datasheet leads with RDS(on), and it is tempting to sort a supplier table by that number and take the smallest value. But on-resistance is bought with silicon area, and silicon area is bought with gate charge, switching loss, and cost. This article explains the economics behind low RDS(on), works through the conduction-versus-switching crossover, … Read more
The TO-252, also called DPAK, is the workhorse surface-mount power package: small enough for high-volume assembly, rugged enough for automotive and industrial boards, and thermally capable when the PCB is designed properly. Its performance, however, is decided more by the copper around it than by the package itself. This article explains how a TO-252 MOSFET’s … Read more
The jump from 1200 V to 1700 V changes more than the voltage rating on the datasheet. A 1700 V device exists because the system around it operates at 1500 V DC—utility-scale solar arrays, battery storage, and some rail traction—where the margin arithmetic leaves little room for error. This article explains where the 1700 V … Read more
The 650 V IGBT lives where the 1200 V part does not go: compact, high-frequency, cost-driven stages in home appliances, induction cookers, and small industrial equipment. It competes against 600 V MOSFETs on conduction loss at high current and against nothing else on cost. This article explains where the 650 V IGBT earns its place, … Read more