Silicon Carbide and Wide Bandgap Hub

Use the Silicon Carbide and Wide Bandgap Hub to choose devices, check ratings, solve failures, verify alternatives, and reach the right Good-Ark technical support path.

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27 guides

Learn what changes when a circuit uses silicon carbide, then compare the voltage class, device type and application. Use the design and reliability guides to investigate the trade-offs behind an attractive efficiency or temperature claim.

Understand SiC and compare technologies

These guides explain the material and device choices, including comparisons with silicon and GaN.

1200V SiC Diodes for EV Charging and Industrial PFC: Selection Criteria

The 1200 V silicon carbide diode is the quiet workhorse of high-voltage power stages: it blocks the DC bus, carries the boost current, and freewheels the load—without the reverse-recovery penalty that forces…

GaN vs SiC vs Silicon in Power Supplies: Three Chemistries, Three Jobs

A power supply built on the wrong material chemistry pays for capability it never uses. Silicon is the cost baseline; silicon carbide buys high-voltage and high-temperature headroom; gallium nitride buys…

Good-Ark SiC Devices in Plain Language: Silicon Carbide for People Outside the Industry

Silicon carbide has been in industrial use for more than a century as an abrasive, and only in the last few decades has it become a semiconductor worth building power converters around. That history is worth…

Isolated Gate Drivers for High-dv/dt SiC and IGBT Bridges: Selection Criteria

Key Takeaways The isolated gate driver has two jobs: amplify the controller signal into a fast, strong gate pulse and isolate the low-voltage side from a floating power rail. For SiC and IGBT bridges, evaluate…

SiC MOSFET vs Silicon MOSFET: Losses, Gate Drive and Selection

Choosing a SiC MOSFET over a silicon MOSFET makes sense when its electrical behavior helps the complete converter meet loss, size or operating requirements. SiC can offer useful advantages in suitable…

SiC SBD or SiC MOSFET: Choosing the Silicon-Carbide Device That Fits the Duty

Silicon carbide comes in two discrete forms a designer must choose between — the SiC Schottky barrier diode (SBD) and the SiC MOSFET — and the choice is not about which material is better but which device the…

SiC Semiconductor Selection: What B2B Buyers Should Verify Before Design-In

Silicon carbide changes the loss equation in one specific place, and that is where a buyer should look first. A 650 V, 10 A SiC Schottky diode is specified with no reverse recovery charge across the…

SiC vs GaN: Two Wide-Bandgap Materials Compared Simply

Both materials are described as wide bandgap, both switch faster than silicon, and both appear in products you can buy today. The reason they are not competitors in most designs is simple: they occupy…

SiC vs Silicon: Why Some Electric Cars Charge Faster

Two cars with similar batteries can charge at noticeably different rates, and part of the difference sits in the power electronics rather than in the cells. Silicon carbide is one reason a converter can handle…

The Silicon Carbide Market in 2026: Capacity, Prices and Adoption

Silicon carbide is the material behind the power devices that made high-voltage switching efficient, and the market around it is best understood as three separate businesses stacked on top of each other:…

What Is Silicon Carbide (SiC)? A Beginner’s Introduction

There is a reasonable chance you have held silicon carbide in your hand without knowing it, because the same material that makes an abrasive disc also makes a power transistor. The difference between the two…

Why Are SiC Devices Expensive, and When Are They Worth It?

The reason a silicon carbide device costs several times what an electrically comparable silicon part costs is not difficult to understand, and it is almost entirely upstream of the device. The expensive part…

Wide Bandgap Semiconductor Sourcing: SiC Diodes and MOSFETs

Wide bandgap semiconductor sourcing starts with the power stage’s requirements, not with a preference for SiC. A silicon carbide Schottky barrier diode is a rectifier; a SiC MOSFET is a controlled switch.…

Wide-Bandgap Components in Plain Language: SiC and GaN Roles for Buyers and Engineers

Silicon carbide and gallium nitride are the two wide-bandgap materials changing power electronics, and most explanations start with a physics term that scares off exactly the people who need the answer. The…

Wide-Bandgap Semiconductors Explained in One Sitting

Every material used to make a semiconductor device can be described by one number: the energy an electron must gain to break free of the atomic lattice and start conducting. That number, the band gap, predicts…

Match devices to conversion applications

Find the reading for the voltage class and application you need to evaluate.

650V SiC MOSFETs for PFC and Server Power: When SiC Moves Down to 650 V

Key Takeaways Silicon carbide built its reputation at 1200 V, where silicon has no clean answer. Before you finalize the BOM, compare the related options: 650V SiC MOSFETs for PFC and Server Power and 1700V…

Running SiC Hot: Junction Temperature, Power Cycling, and Reliability Evidence

The selling point of silicon carbide is that it runs hot — a 175 °C or 200 °C junction is inside the SiC envelope where silicon gives up. But running hot changes the reliability question, not the answer: a…

SiC Power Device Design Guide: Voltage, Topology, and Reliability

This guide is the entry point to the Good-Ark silicon carbide library. It maps the SiC decisions—which voltage class, which device (MOSFET or diode), which topology, and how hot the design can run—and points…

USB-PD Charger Rectifier Design: Where Silicon Schottky Still Fits in the GaN Era

Gallium-nitride switches shrank the primary side of USB-PD chargers, but the output stage still turns on a silicon Schottky: at 5–20 V and a few amps, the forward drop is the loss, the PDFN56 package is the…

When a SiC Schottky Diode Improves CCM PFC Efficiency and EMI

Key Takeaways The boost diode in a power factor correction stage lives a hard life: it blocks 400–800 V, switches at the converter frequency, and carries the full output current. Before you finalize the BOM,…

Why 800 V Electric Cars Need Silicon Carbide

Doubling the battery voltage looks like a simple change and behaves like a redesign. It halves the current needed for the same power, which is why it is attractive; it also changes what the semiconductors have…

Check drive, layout and reliability

Use these references when the device choice needs to be turned into a design or qualification review.

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