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Trench Schottky Diodes: Structure, Losses and Thermal Selection

Trench Schottky Diodes: Structure, Losses and Thermal Selection

A trench Schottky diode is a Schottky rectifier that uses a trench-based semiconductor structure to improve the trade-off between forward conduction, reverse blocking and leakage. The important distinction is electric-field management, not a guarantee of zero loss or the smallest forward drop. Its benefit must be assessed at the circuit’s current, reverse voltage, temperature and … Read more

1N4001G Rectifier Diode: Key Specs and Low-Voltage Circuit Checks

1N4001G Rectifier Diode: Key Specs and Low-Voltage Circuit Checks

The Good-Ark 1N4001G diode is the 50 V reverse-voltage member of its standard 1 A rectifier family. It is commonly considered for suitable low-voltage rectification and blocking paths, but its 50 V limit must be checked against the circuit’s actual reverse stress. Transformer RMS voltage, capacitor charge and wiring topology can make that stress substantially … Read more

1N4002G Rectifier Diode: Specs, Polarity, Uses and Replacements

1N4002G Rectifier Diode: Specs, Polarity, Uses and Replacements

The 1N4002G is a general-purpose silicon rectifier with a 1 A average-current rating and a 100 V repetitive reverse-voltage rating. Its axial leads suit through-hole circuits. It can rectify low-frequency AC, but the manufacturer matters: the suffix, forward drop and other specifications must come from the data sheet for the actual part. If you are … Read more

1F5G Fast Recovery Rectifier: Specs, Polarity and Replacements

1F5G Fast Recovery Rectifier: Specs, Polarity and Replacements

The Good-Ark 1F5G fast recovery rectifier is a single silicon diode rated at 1 A average forward current and 600 V repetitive peak reverse voltage, in an R-1 axial package. Its maximum reverse recovery time is 250 ns under the manufacturer’s stated test conditions. These ratings help identify the part; they do not establish suitability … Read more

1F4G Fast Recovery Rectifier: 400 V Ratings and Replacement Checks

1F4G Fast Recovery Rectifier: 400 V Ratings and Replacement Checks

The Good-Ark 1F4G fast recovery rectifier is a 1 A, 400 V silicon diode in an R-1 axial package. Its maximum reverse recovery time is 150 ns under the manufacturer’s specified test conditions. The 400 V blocking rating distinguishes it from lower-voltage members of the family, but does not guarantee suitability for every circuit operating … Read more

1F3G Fast Recovery Rectifier: Specifications, Polarity and Testing

1F3G Fast Recovery Rectifier: Specifications, Polarity and Testing

The Good-Ark 1F3G fast recovery rectifier is a single silicon diode rated at 1 A average forward rectified current and 200 V repetitive peak reverse voltage. It uses an R-1 axial package and specifies 150 ns maximum reverse recovery time under defined test conditions. The banded end identifies its cathode. If you are identifying a … Read more

Good-Ark 10A05 Rectifier: Specifications, Polarity and Applications

Good-Ark 10A05 Rectifier: Specifications, Polarity and Applications

The Good-Ark 10A05 rectifier is a standard silicon rectifier with a listed 10 A average-current rating and a 50 V repetitive peak reverse-voltage rating, in an R-6/P600 axial package. It passes useful forward current and resists reverse current. Those numbers identify the device class; they do not establish that it can carry 10 A on … Read more

IGBT vs MOSFET: How IGBTs Work and How to Select Them

IGBT vs MOSFET: How IGBTs Work and How to Select Them

Choosing between an IGBT and a MOSFET starts with the converter’s current and switching events. An insulated gate bipolar transistor combines a voltage-controlled insulated gate with bipolar conduction in its power path. It can be useful in power converters and motor drives, but its turn-off behavior, gate drive and associated diode must fit the circuit. … Read more

SiC MOSFET vs Silicon MOSFET: Losses, Gate Drive and Selection

SiC MOSFET vs Silicon MOSFET: Losses, Gate Drive and Selection

Choosing a SiC MOSFET over a silicon MOSFET makes sense when its electrical behavior helps the complete converter meet loss, size or operating requirements. SiC can offer useful advantages in suitable higher-voltage switching stages, but a material name alone does not establish better efficiency. Compare the actual devices at the same voltage, current, temperature and … Read more

Wide Bandgap Semiconductor Sourcing: SiC Diodes and MOSFETs

Wide Bandgap Semiconductor Sourcing: SiC Diodes and MOSFETs

Wide bandgap semiconductor sourcing starts with the power stage’s requirements, not with a preference for SiC. A silicon carbide Schottky barrier diode is a rectifier; a SiC MOSFET is a controlled switch. Specify the voltage, current waveform, switching conditions, cooling and qualification needs before comparing devices, samples and commercial terms. This guide focuses on SiC … Read more

How to Choose the Right Power Rectifier: Ratings and Losses

How to Choose the Right Power Rectifier: Ratings and Losses

To choose the right power rectifier, first identify its circuit role, then check reverse voltage, the full current waveform, switching behavior and cooling. A diode that matches the load current can still be unsuitable if it cannot withstand the reverse peak, startup pulse or temperature in the finished assembly. The selection process below works for … Read more

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