High-Temperature SiC Reliability: Junction Temperature, Power Cycling, and Lifetime Derating

At junction temperatures above 150 °C, the question changes from “can the device survive this temperature?” to “how long do the materials around the die survive it?” Silicon carbide raises the die’s intrinsic temperature capability, but the package, the solder, the thermal interface, and the board still age by the same physics. This article gives … Read more

SiC Power Device Design Guide: Voltage, Topology, and Reliability

This guide is the entry point to the Good-Ark silicon carbide library. It maps the SiC decisions—which voltage class, which device (MOSFET or diode), which topology, and how hot the design can run—and points to the dedicated articles that carry the detail. Use it to position the design before the datasheet comparison. The SiC Decision … Read more

Power Package Thermal Design: From Rth(j-a) to Junction Temperature

This guide is the shared reference for the thermal method used across the Good-Ark package and device articles. It explains the thermal chain, the board design levers, and the measurement discipline, so the package-specific articles can focus on their own differences instead of repeating the fundamentals. If you are new to power thermal design, read … Read more

Copyright Suzhou Good-Ark Electronics Co., Ltd. All Rights Reserved