The 1200 V silicon carbide diode is the quiet workhorse of high-voltage power stages: it blocks the DC bus, carries the boost current, and freewheels the load—without the reverse-recovery penalty that forces silicon designs to compromise. This article is about the device-selection side of that story: which ratings matter at 1200 V, which application roles … Read more
Key Takeaways The boost diode in a power factor correction stage lives a hard life: it blocks 400–800 V, switches at the converter frequency, and carries the full output current. Before you finalize the BOM, compare the related options: When a SiC Schottky Diode Improves CCM PFC Efficiency and EMI and Schottky Barrier Rectifier Diode. … Read more
A fast recovery diode is a rectifier designed to change from forward conduction to reverse blocking with shorter recovery than a standard-recovery device under comparable conditions. It can reduce recovery-related stress in suitable switching circuits, but the best choice depends on recovery charge, forward loss, temperature and the way the circuit forces the diode to … Read more
SMB fast recovery diodes trade footprint for thermal headroom. What a 2 A part really carries, and how package, recovery and surge decide the design.
The same 1 A ultrafast die is 45 °C/W junction-to-lead in DO-41, 30 in SMA and 25 in SMB. How SMA package choice, recovery and heat decide the part.
In one 600 V family the 30 A TO-247 diode is rated 0.70 °C/W junction-to-case and the 60 A part 0.38 °C/W. How the thermal path sets usable current.
Send the topology, current and voltage class. Good-Ark sales and application engineering will confirm the closest device, package and qualification status.