SiC Schottky diode

When a SiC Schottky Diode Improves CCM PFC Efficiency and EMI

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The boost diode in a power factor correction stage lives a hard life: it blocks 400–800 V, switches at the converter frequency, and carries the full output current. Silicon fast-recovery diodes have historically survived the job, but their reverse-recovery charge grows with temperature and di/dt, creating losses, ringing, and EMI that limit the whole converter. … Read more

Silicon PN Rectifier Diodes: Physics, Recovery Behavior and Technology Trade-Offs

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A silicon PN rectifier trades stored charge for robust voltage blocking, mature manufacturing, and attractive cost. This page explains that trade at device-physics level: how the depletion region blocks reverse voltage, how drift-region thickness and doping set resistance and breakdown capability, and why injected minority carriers reduce conduction loss but later create reverse-recovery charge. Those … Read more

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