Not every IGBT design needs a power module. Below a few tens of kilowatts, discrete IGBTs in TO-247, TO-220, and TO-263 packages carry the load with lower cost, simpler sourcing, and a flexible layout—provided the package’s thermal, mounting, and insulation realities are respected. This article covers the discrete side of IGBT selection: how the packages … Read more
A solar module’s bypass protection can be built from discrete diodes or from a bypass diode module—an integrated assembly that packages several diodes, the lead frame, and often the connectors into one unit. The two approaches reach the same electrical function through different assembly and thermal paths, and the choice affects production yield, field reliability, … Read more
The bypass rectifier is the smallest component in a solar module and one of the most thermally stressed: it carries the full string current in a sealed junction box, at high ambient, for hours under shading. Its selection is a rating exercise—forward drop, leakage at temperature, surge, and the thermal path—and getting any of them … Read more
This guide is the entry point to the Good-Ark silicon carbide library. It maps the SiC decisions—which voltage class, which device (MOSFET or diode), which topology, and how hot the design can run—and points to the dedicated articles that carry the detail. Use it to position the design before the datasheet comparison. Last updated: October … Read more
An isolated DC-DC converter can be built from a transformer, a controller, and a handful of discrete parts—or bought as a module that packages all of it into one component. For gate-drive supplies, industrial control boards, and sensor power, the module is often the engineering-correct choice: it moves the isolation design, the magnetics, and the … Read more
The gap between a power device that works on the bench and one that survives years in the field is filled by testing—at the datasheet level, the thermal level, the reliability level, and the assembly level. For engineers and buyers qualifying power discretes, understanding what is tested, how, and with what criteria separates a trustworthy … Read more
This guide is the entry point to the Good-Ark power MOSFET library: it maps the selection decisions—voltage class, polarity, loss budget, and package—and points to the dedicated articles that go deep on each step. Use it as the decision map before opening a datasheet; the linked articles carry the detail. Last updated: October 11, 2026 … Read more
This guide is the shared reference for the thermal method used across the Good-Ark package and device articles. It explains the thermal chain, the board design levers, and the measurement discipline, so the package-specific articles can focus on their own differences instead of repeating the fundamentals. If you are new to power thermal design, read … Read more
This guide is the shared reference for gate-drive design across the Good-Ark library. It covers the two questions every drive design answers—how much current, and how much dead time—plus the protection set, and it routes the device-specific detail to the dedicated articles. Read this page for the method; read the linked articles for the device … Read more
This guide is the entry point to the Good-Ark photovoltaic protection library. It maps the protection layers of a PV system—from the module substring to the inverter input—and routes each threat to the right device and the right article. Use it to position the protection architecture before selecting components. Last updated: October 16, 2026 Identify … Read more
The first question in almost every load-switching design is not which part number to use—it is which polarity. N-channel and P-channel MOSFETs solve the same switching problem from opposite sides of the circuit, and the choice drives the gate drive, the bill of materials, and sometimes the whole board topology. This article compares the two … Read more
Every MOSFET datasheet leads with RDS(on), and it is tempting to sort a supplier table by that number and take the smallest value. But on-resistance is bought with silicon area, and silicon area is bought with gate charge, switching loss, and cost. This article explains the economics behind low RDS(on), works through the conduction-versus-switching crossover, … Read more
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