Forward voltage (VF) is not a fixed datasheet number; it is a function of current, junction temperature, and device construction. Design with the maximum VF at the operating temperature, and the loss math—conduction loss is simply IF × VF—stops producing surprises. This guide covers the physics behind the number, how it moves with temperature, and … Read more
Key Takeaways QFN and DFN are the leadless workhorses of modern power and signal electronics: small, low-inductance, and thermally capable when the PCB cooperates. Before you finalize the BOM, compare the related options: TO-252 (DPAK) Power MOSFETs and Low RDS(on) Power MOSFETs. Verify your choice against official product data and application guidance: Good-Ark MOSFET product … Read more
Key Takeaways Ask most designers what protects a solar module and they will say bypass diodes—correctly, but incompletely. Before you finalize the BOM, compare the related options: PV Module and String Protection and What Is a Schottky Bypass Diode Module and Why Use It?. Verify your choice against official product data and application guidance: Good-Ark … Read more
Key Takeaways In a converter switching at 500 kHz or 1 MHz, the gate driver is not a peripheral—it is the timing engine. Before you finalize the BOM, compare the related options: High-Speed Gate Driver Design for GaN Half-Bridges and Isolated Gate Drivers for High-dv/dt SiC and IGBT Bridges. Verify your choice against official product … Read more
Key Takeaways At junction temperatures above 150 °C, the question changes from “can the device survive this temperature? Before you finalize the BOM, compare the related options: High-Temperature SiC Reliability and 1700V SiC MOSFETs for 1500V Solar and Rail Power. Verify your choice against official product data and application guidance: Good-Ark SiC and discrete products … Read more
Key Takeaways Silicon carbide built its reputation at 1200 V, where silicon has no clean answer. Before you finalize the BOM, compare the related options: 650V SiC MOSFETs for PFC and Server Power and 1700V SiC MOSFETs for 1500V Solar and Rail Power. Verify your choice against official product data and application guidance: Good-Ark SiC … Read more
The 1200 V silicon carbide diode is the quiet workhorse of high-voltage power stages: it blocks the DC bus, carries the boost current, and freewheels the load—without the reverse-recovery penalty that forces silicon designs to compromise. This article is about the device-selection side of that story: which ratings matter at 1200 V, which application roles … Read more
Not every IGBT design needs a power module. Below a few tens of kilowatts, discrete IGBTs in TO-247, TO-220, and TO-263 packages carry the load with lower cost, simpler sourcing, and a flexible layout—provided the package’s thermal, mounting, and insulation realities are respected. This article covers the discrete side of IGBT selection: how the packages … Read more
A solar module’s bypass protection can be built from discrete diodes or from a bypass diode module—an integrated assembly that packages several diodes, the lead frame, and often the connectors into one unit. The two approaches reach the same electrical function through different assembly and thermal paths, and the choice affects production yield, field reliability, … Read more
The bypass rectifier is the smallest component in a solar module and one of the most thermally stressed: it carries the full string current in a sealed junction box, at high ambient, for hours under shading. Its selection is a rating exercise—forward drop, leakage at temperature, surge, and the thermal path—and getting any of them … Read more