Selection guides, application notes and design checks for rectifiers, Schottky diodes, TVS protection, MOSFETs, SiC and IGBTs — written for engineers and sourcing teams.
The 650 V IGBT lives where the 1200 V part does not go: compact, high-frequency, cost-driven stages in home appliances, induction cookers, and small industrial equipment. It competes against 600 V MOSFETs on conduction loss at high current and against nothing else on cost. This article explains where the 650 V IGBT earns its place, … Read more
The jump from 1200 V to 1700 V changes more than the voltage rating on the datasheet. A 1700 V device exists because the system around it operates at 1500 V DC—utility-scale solar arrays, battery storage, and some rail traction—where the margin arithmetic leaves little room for error. This article explains where the 1700 V … Read more
The TO-252, also called DPAK, is the workhorse surface-mount power package: small enough for high-volume assembly, rugged enough for automotive and industrial boards, and thermally capable when the PCB is designed properly. Its performance, however, is decided more by the copper around it than by the package itself. This article explains how a TO-252 MOSFET’s … Read more
Every MOSFET datasheet leads with RDS(on), and it is tempting to sort a supplier table by that number and take the smallest value. But on-resistance is bought with silicon area, and silicon area is bought with gate charge, switching loss, and cost. This article explains the economics behind low RDS(on), works through the conduction-versus-switching crossover, … Read more
The first question in almost every load-switching design is not which part number to use—it is which polarity. N-channel and P-channel MOSFETs solve the same switching problem from opposite sides of the circuit, and the choice drives the gate drive, the bill of materials, and sometimes the whole board topology. This article compares the two … Read more
Key Takeaways AEC-Q101 is the entry ticket, not the whole story: the mission profile (temperature cycles, load dump, SOA) decides whether the MOSFET survives a decade in a vehicle. Load-dump and transient protection need coordinated choices — see TVS for load dump and automotive rectifier selection. Gate drive quality matters as much as the device: … Read more
Key Takeaways A 5 V, 20 A output with a Schottky rectifier burns more power in the diode than in the transformer. Before you finalize the BOM, compare the related options: Synchronous Rectifier MOSFETs and Trench vs Planar MOSFETs. Verify your choice against official product data and application guidance: Good-Ark MOSFET product families and Good-Ark … Read more
Key Takeaways Two letters on a datasheet—”trench” or “planar”—tell you more about a power MOSFET than most of its front-page numbers. Before you finalize the BOM, compare the related options: Trench vs Planar MOSFETs and TO-252 (DPAK) Power MOSFETs. Verify your choice against official product data and application guidance: Good-Ark MOSFET product families and Good-Ark … Read more
Key Takeaways Super junction MOSFETs use charge-balanced pillars to break the classic voltage-versus-RDS(on) trade-off, which is why they dominate high-voltage PFC, flyback and LLC stages. Compare datasheets by application conditions — RDS(on) at the real junction temperature, not the 25 °C headline number; our low RDS(on) guide explains where the money actually goes. Pair the … Read more
Key Takeaways Every design team eventually hits the same wall: the microcontroller speaks 3. Before you finalize the BOM, compare the related options: Logic-Level Power MOSFETs and TO-252 (DPAK) Power MOSFETs. Verify your choice against official product data and application guidance: Good-Ark MOSFET product families and Good-Ark featured power MOSFETs. Good-Ark discrete power semiconductor family … Read more
Key Takeaways The isolated gate driver has two jobs: amplify the controller signal into a fast, strong gate pulse and isolate the low-voltage side from a floating power rail. For SiC and IGBT bridges, evaluate dv/dt immunity, propagation delay, dead-time control and CMTI — our GaN half-bridge drive guide covers the timing side. Match driver … Read more
Key Takeaways Bypass diodes carry the full module current during partial shading; thermal design inside a plastic junction box is what decides survival, not just the diode rating. Match VF, leakage and surge capability to the module current and temperature — see the photovoltaic diode engineering guide and our module and string protection article. For … Read more
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