The jump from 1200 V to 1700 V changes more than the voltage rating on the datasheet. A 1700 V device exists because the system around it operates at 1500 V DC—utility-scale solar arrays, battery storage, and some rail traction—where the margin arithmetic leaves little room for error. This article explains where the 1700 V … Read more
The 650 V IGBT lives where the 1200 V part does not go: compact, high-frequency, cost-driven stages in home appliances, induction cookers, and small industrial equipment. It competes against 600 V MOSFETs on conduction loss at high current and against nothing else on cost. This article explains where the 650 V IGBT earns its place, … Read more
Key Takeaways Every design team eventually hits the same wall: the microcontroller speaks 3. Before you finalize the BOM, compare the related options: Logic-Level Power MOSFETs and TO-252 (DPAK) Power MOSFETs. Verify your choice against official product data and application guidance: Good-Ark MOSFET product families and Good-Ark featured power MOSFETs. Good-Ark discrete power semiconductor family … Read more
Key Takeaways Super junction MOSFETs use charge-balanced pillars to break the classic voltage-versus-RDS(on) trade-off, which is why they dominate high-voltage PFC, flyback and LLC stages. Compare datasheets by application conditions — RDS(on) at the real junction temperature, not the 25 °C headline number; our low RDS(on) guide explains where the money actually goes. Pair the … Read more
Key Takeaways Two letters on a datasheet—”trench” or “planar”—tell you more about a power MOSFET than most of its front-page numbers. Before you finalize the BOM, compare the related options: Trench vs Planar MOSFETs and TO-252 (DPAK) Power MOSFETs. Verify your choice against official product data and application guidance: Good-Ark MOSFET product families and Good-Ark … Read more
Key Takeaways A 5 V, 20 A output with a Schottky rectifier burns more power in the diode than in the transformer. Before you finalize the BOM, compare the related options: Synchronous Rectifier MOSFETs and Trench vs Planar MOSFETs. Verify your choice against official product data and application guidance: Good-Ark MOSFET product families and Good-Ark … Read more
Key Takeaways AEC-Q101 is the entry ticket, not the whole story: the mission profile (temperature cycles, load dump, SOA) decides whether the MOSFET survives a decade in a vehicle. Load-dump and transient protection need coordinated choices — see TVS for load dump and automotive rectifier selection. Gate drive quality matters as much as the device: … Read more
Key Takeaways The 1200 V class has become the battleground of high-efficiency power conversion. Before you finalize the BOM, compare the related options: 1200V SiC MOSFETs for Solar Inverters and 800V EV Chargers and 1700V SiC MOSFETs for 1500V Solar and Rail Power. Verify your choice against official product data and application guidance: Good-Ark SiC … Read more
Key Takeaways The boost diode in a power factor correction stage lives a hard life: it blocks 400–800 V, switches at the converter frequency, and carries the full output current. Before you finalize the BOM, compare the related options: When a SiC Schottky Diode Improves CCM PFC Efficiency and EMI and Schottky Barrier Rectifier Diode. … Read more
Key Takeaways The 1200 V IGBT remains the workhorse of industrial power conversion—not because it is the newest technology, but because it hits the right balance of cost, ruggedness, and drive simplicity for tens of kilowatts. Before you finalize the BOM, compare the related options: 1200V IGBTs for 4–16 kHz Motor Drives and 650V IGBTs … Read more